Samsung Electronics has developed the industry's first one gigabit (Gb) Mobile Dram (dynamic random access memory) for mobile products, using 80nm process technology.
The new chip, also known as low-power DDR (double data rate) or synchronous Dram , will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products.
The monolithic 1Gb Mobile Dram is a highly competitive choice for mobile applications over the double-die stack, 1GB memory solution widely used today, as the electric current in the new chip drops a full 30 per cent.
The new 1Gb Mobile Dram chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature.
This new temperature-compensated, self-refresh feature maximises the self-refresh cycle to reduce power drain in standby mode by 30 per cent over conventional memory chip designs.
Also offering a more compact form factor, the new 1Gb Mobile Dram chip is at least 20 per cent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile Dram memory, for which market demand is expected to grow in 2007.
One 1 GB mobile Dram can also be combined with Flash memory in multi-chip packaging including package-on-package designs.
Samsung plans to mass produce the new device beginning in the second quarter of 2007 at a time when demand for high-density 1Gb mobile Dram is expected to be very high.TradeArabia News Service
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